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GaN Systems & APEI to Package Gallium Nitride Power Transistors for High-Temperature, High-Performance Applications

Date: 05/04/2012

Company: GaN Systems

Source: MarketWire

Advanced Packaging the Key to Unlocking Vast Potential of Gallium Nitride for High Power Uses

OTTAWA, ONTARIO–(Marketwire – May 3, 2012) –

Editors Note: There is a photo accompanying this release.

GaN Systems Inc., provider of gallium nitride power switching semiconductors, and Arkansas Power Electronics International Inc. (APEI), developer of state-of-the-art technology for power electronics systems, electronic motor drives, and power electronics packaging, today announced they will collaborate on the development of a high-temperature, high-performance package optimized for gallium nitride transistors and diodes. This co-development is funded in part by the Government of Canada through Sustainable Development Technology Canada (SDTC) with the goal of demonstrating the efficiency, performance, and reliability of gallium nitride power devices in a power converter for hybrid and electric vehicles (HEVs and EVs).

“As gallium nitride is just beginning to gain acceptance for the next generation of power semiconductors, prospective users are keen to see the technology validated through real system design implementations,” said Girvan Patterson, CEO of GaN Systems. “Advanced packaging is the key that unlocks the vast potential of gallium nitride in high-power applications so we are delighted to be collaborating with a world leader on a package and system design that will maximize the benefits of this exciting technology. This important partnership also marks a powerful endorsement of our patented, island-based topology, validating our unique design approach.”

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